TELEFUNKEN Semiconductors

Telefunken has always been synonymous with leading edge technology. Now our mission, our focus, our passion is to harness our process and design excellence to solve the world’s toughest IC challenges.

Excellence in semiconductors requires system and application knowledge, innovative and experienced designers and process technology optimized for the specific application. At Telefunken, we have assembled a set of unique core processes and a dedicated team of technologists to create world class ICs in the areas of Power Management and High Performance Interface.


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Telefunken’s core processes include SOI, SiGe and High Voltage BiCMOS.

Silicon-on-Insulator (SOI), is fabricated using a buried layer of SiO2 that essentially eliminates leakage, crosstalk and parasitic elements. SOI offers the unique combination of a rugged latch-up free technology able to withstand the highest temperature and voltage extremes while providing the lowest noise for high performance analog design.

SiGe offers very high frequency capability with minimal switching noise. Optimized Bipolar devices combine high current drive with gentle turn on/off. SiGe technology provides high bandwidth at low power and with minimal device induced jitter.

High Voltage BiCMOS is optimized to withstand the hundreds of Volts necessary for AC/DC conversion and the high currents and voltages seen in heavy industrial applications.

WHAT'S NEW

May 2010 - ISMOsys signs with Telefunken Semiconductor
Telefunken Semiconductor is pleased to introduce ISMOsys as the latest addition to our network.
For contact details: Europe Israel

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Telefunken is pleased to announce the opening of its Hannover development center in Hannover Germany.
The team in Hannover has a proven track record with a combined +150 years of mixed signal design expertise. The group will immediately begin work on HV Power Management and High Performance Interface designs.
Hannover joins the existing development centers in Dover, New Hampshire, and Santa Clara, California, both in the USA.
 
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